Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1–xPx Nanowires
نویسندگان
چکیده
منابع مشابه
Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs<sub>1–<italic>x</italic></sub>P<sub><italic>x</italic></sub> Nanowires
III−V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconducto...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2016
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.5b04067